Charge Transport Mechanism in the Forming-Free Memristor Based on PECVD Silicon Oxynitride

A memristor is a new generation memory that merges dynamic random access and flash properties. In addition, it can be used in neuromorphic electronics. The advantage of silicon oxynitride, as an active layer, over other dielectrics compatibility with technology. It expected SiNxOy-based memristors will combine the advantages based on nonstoichiometric oxides nitrides. present work, plasma-enhanced chemical vapor deposition (PECVD) method was to fabricate oxynitride-based memristor. leakage currents determine its power consumption. To minimize consumption, required study charge transport mechanism high-resistance state low-resistance state. PECVD high low resistance states cannot described by Schottky effect, thermally assisted tunneling model, Frenkel effect model Coulomb isolated trap ionization, Hill–Adachi overlapping potentials, Makram–Ebeid Lannoo multiphonon Nasyrov–Gritsenko phonon-assisted between traps, or Shklovskii–Efros percolation model. forming-free SiO0.9N0.6-based space limited current parameters responsible for various are determined. For state, ionization energy W 0.35 eV, concentration Nd 1.7 × 1019 cm−3; 0.01 Nt 4.6 1017 cm−3.